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The SIRA00DP-T1-GE3 is MOSFET N-CH 30V 100A PPAK SO-8, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIRA00DP-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as PowerPAKR SO-8 Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is PowerPAKR SO-8, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 104W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 11700pF @ 15V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 100A (Tc), and Rds On Max Id Vgs is 1 mOhm @ 20A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 220nC @ 10V, and the Pd Power Dissipation is 104 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 11 ns, and the Rise Time is 14 ns, and Vgs Gate Source Voltage is 2.2 V, and the Id Continuous Drain Current is 60 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 67 ns, and Typical Turn On Delay Time is 18 ns, and the Qg Gate Charge is 66 nC, and Forward Transconductance Min is 140 S.

The SIR928-6C-F is EMITTER IR 875NM 100MA RADIAL, that includes 875nm Wavelength, they are designed to operate with a 1.3V Voltage Forward Vf Typ, Viewing Angle is shown on datasheet note for use in a 40°, that offers Type features such as IR, Packaging is designed to work in Bulk, as well as the Radial Package Case, the device can also be used as Side View Orientation, it has an Operating Temperature range of -25°C ~ 85°C (TA), the device is offered in Through Hole, Right Angle Mounting Type, the device has a Infrared of Illumination Color, and Current DC Forward If Max is 100mA.

SiR892DP-T1-E3 with circuit diagram manufactured by VISHAY. The SiR892DP-T1-E3 is available in QFN8 Package, is part of the IC Chips.

SIR892DP-T1-GE3-S with EDA / CAD Models manufactured by VISHAY. The SIR892DP-T1-GE3-S is available in QFN Package, is part of the IC Chips.