This SI4599DY-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.