Make an effective common gate amplifier using this SI9933CDY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.