Create an effective common drain amplifier using this SI1012CR-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 240 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.