The SI2302DDS-T1-GE3 parts are Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The SI2302DDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The SI2302CDS-T1-GE3 is MOSFET N-CH 20V 2.6A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2302CDS-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 710mW, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 20V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 2.6A (Ta), and Rds On Max Id Vgs is 57 mOhm @ 3.6A, 4.5V, and the Vgs th Max Id is 850mV @ 250μA, and Gate Charge Qg Vgs is 5.5nC @ 4.5V, and the Pd Power Dissipation is 710 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns, and the Rise Time is 7 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 2.6 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 57 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 30 ns, and Typical Turn On Delay Time is 8 ns, and the Channel Mode is Enhancement.

Si2302DDS-T1-GE3 with user guide, that includes 0.85 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 8 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Unit Weight features such as 0.050717 oz, Typical Turn On Delay Time is designed to work in 8 ns, as well as the 30 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in TrenchFET Tradename, the device has a Si of Technology, and Series is SI2302DDS, and the Rise Time is 7 ns, and Rds On Drain Source Resistance is 57 mOhms, and the Qg Gate Charge is 3.5 nC, and Pd Power Dissipation is 710 mW, and the Packaging is Reel, and Package Case is SOT-23-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 2.9 A, and Forward Transconductance Min is 13 S, and the Fall Time is 7 ns, and Channel Mode is Enhancement.

SI2302COV with circuit diagram manufactured by RICHTEK. The SI2302COV is available in SOT23 Package, is part of the IC Chips.

SI2302DC-T1 with EDA / CAD Models manufactured by SILICONIX. The SI2302DC-T1 is available in SOT23 Package, is part of the IC Chips.