The SI2333CDS-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The SI2333CDS-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI2333CDS-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.

The SI2333CDS-T1-E3 is MOSFET P-CH 12V 7.1A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2333CDS-E3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-236-3, SC-59, SOT-23-3 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is SOT-23-3 (TO-236), and the Configuration is Single, and FET Type is MOSFET P-Channel, Metal Oxide, and the Power Max is 2.5W, and Transistor Type is 1 P-Channel, and the Drain to Source Voltage Vdss is 12V, and Input Capacitance Ciss Vds is 1225pF @ 6V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 7.1A (Tc), and the Rds On Max Id Vgs is 35 mOhm @ 5.1A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 25nC @ 4.5V, and Pd Power Dissipation is 1.25 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 35 ns, and Rise Time is 35 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 5.1 A, and the Vds Drain Source Breakdown Voltage is - 12 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 45 ns, and the Typical Turn On Delay Time is 13 ns, and Channel Mode is Enhancement.

SI2333CDS with user guide manufactured by VISHAY. The SI2333CDS is available in SOT23 Package, is part of the FETs - Single.

Si2333CDS-T1-E3/O3 with circuit diagram The Si2333CDS-T1-E3/O3 is available in SOT23-3 Package, is part of the IC Chips.