GENERAL DESCRIPTION

The ME2328 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

FEATURES

● RDS(ON)≦ 270mΩ@VGS=10V

● RDS(ON)≦ 340mΩ@VGS=4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current capability

APPLICATIONS

● Power Management in Note book

● DC/DC Converter

● Load Switch

● LCD Display inverter