Description

The FM24CL04 is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

Unlike serial EEPROMs, the FM24CL04 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately.

These capabilities make the FM24CL04 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24CL04 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL04 is available in an industry standard 8-pin package using a two-wire protocol. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C.

Features

4K bit Ferroelectric Nonvolatile RAM

• Organized as 512 x 8 bits

• Unlimited Read/Writes

• 10 Year Data Retention

• NoDelay™ Writes

• Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

• Up to 1 MHz maximum bus frequency

• Direct hardware replacement for EEPROM

Low Power Operation

• 2.7V to 3.65V operation

• 75 µA Active Current (100 kHz) @ 3V

• 1 µA Standby Current

Industry Standard Configuration

• Industrial Temperature -40° C to +85° C

• 8-pin SOIC