1. High DC current gain: hFE= 200 to 500 (IC= −0.5 A)

2. Low collector-emitter saturation: VCE (sat)= −0.27 V (max)

3. High-speed switching: tf= 37 ns (typ.)

Absolute maximum ratings

1. Collector-base voltage : VCBO = – 20 V

2. Collector-emitter voltage : VCEO = – 20 V

3. Emitter-base voltage : VEBO = – 7 V

4. Collector current (DC) : IC = – 1.5 A

5. Base current : IB = – 150 mA

6. Junction temperature : Tj = 150 °C

7.. Storage temperature range : Tstg = -55 to 150 °C