The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc

Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc

High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc

Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

These Devices are Pb-Free and are RoHS Compliant

MJD200 is the complementary NPN device