This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(ON) in a small package.

66 A, 30 V

RDS(on) = 8 mΩ @ VGS = 10 V

RDS(on) = 10 mΩ @ VGS = 4.5 V

Low gate charge

Fast switching speed

High performance trench technology for extremely low RDS(on)

This product is general usage and suitable for many different applications.