Dual P-Channel Enhancement Mode Field Effect Transistor     

The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical.

-RoHS Compliant

-Halogen Free*