The -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection                                                                                                             

 G66This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.