Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Through Hole SPT

Features

1) High DC current gain. hFE = 1200 (Typ.)

2) High emitter-base voltage. VEBO = 12V (Min.)

3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)