Description

The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Features

• VDSS −30 V (TA = 25°C)

• Low on-state resistance

⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)

• 4.5 V Gate-drive available

• Built-in gate protection diode

• Small & thin type surface mount package with heat spreader (8-pin HVSON)

• Halogen free and RoHS compliant