Product Details

○ Swtching Applications

○ Load Switch Applications

○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)

(PNP Transistor)

• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)

(PNP Transistor)

• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)