The 2N7000D75Z parts manufactured by FAIRCHILD are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The 2N7000D75Z components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the 2N7000D75Z Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.

The 2N7000BU is MOSFET N-CH 60V 0.2A TO-92, that includes Bulk Packaging, they are designed to operate with a 2N7000BU_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.006314 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-226-3, TO-92-3 (TO-226AA), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-92-3 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 400mW, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 50pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 200mA (Tc), and Rds On Max Id Vgs is 5 Ohm @ 500mA, 10V, and the Vgs th Max Id is 3V @ 1mA, and Pd Power Dissipation is 400 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 10 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 200 mA, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 1.2 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 10 ns, and the Typical Turn On Delay Time is 10 ns, and Forward Transconductance Min is 0.1 S.

2N7000_D75Z with user guide, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 60 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.007090 oz, that offers Transistor Type features such as 1 N-Channel, Transistor Polarity is designed to work in N-Channel, as well as the Si Technology, the device can also be used as 1.2 Ohms Rds On Drain Source Resistance. In addition, the Pd Power Dissipation is 400 mW, the device is offered in Ammo Pack Packaging, the device has a TO-92-3 of Package Case, and Number of Channels is 1 Channel, and the Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 200 mA, and the Forward Transconductance Min is 0.1 S, and Configuration is Single, and the Channel Mode is Enhancement.

2N7000A with circuit diagram manufactured by KEC. The 2N7000A is available in TO-92 Package, is part of the IC Chips.

2N7000-A with EDA / CAD Models manufactured by VISHAY. The 2N7000-A is available in TO-92 Package, is part of the IC Chips.