This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.

0.9 A, 20 V

RDS(ON) = 220 mΩ @ VGS = 4.5 V

RDS(ON) = 300 mΩ @ VGS = 2.5 V

Low gate charge

Fast switching speed

High performance trench technology for extremelylow RDS(ON)

This product is general usage and suitable for many different applications.

Load Switch

Battery Protection

Power Management