PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

-1.5 A, -30 V

RDS(ON) = 125 mΩ @ VGS = 10 V

RDS(ON) = 200 mΩ @ VGS = 4.5 V.

Low Gate Charge (4 nC typical)

High Performance Trench Technology for Extremely Low rDS(on)

High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

This product is general usage and suitable for many different applications.

Load Switch

Power Management

Battery Charging Circuit

DC-DC Conversion