The FDD5810 parts are N-Channel Logic Level Trench MOSFET 60V, 36A, 27m, manufactured by ON are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The FDD5810 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The FDD5690 is MOSFET N-CH 60V 30A D-PAK, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDD5690_NL, that offers Unit Weight features such as 0.009184 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-252-3, DPak (2 Leads + Tab), SC-63 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is TO-252, and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 1.3W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 1110pF @ 25V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 30A (Tc), and the Rds On Max Id Vgs is 27 mOhm @ 9A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 32nC @ 10V, and Pd Power Dissipation is 3.2 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 10 ns, and Rise Time is 9 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 30 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 23 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 24 ns, and the Typical Turn On Delay Time is 10 ns, and Forward Transconductance Min is 24 S, and the Channel Mode is Enhancement.

The FDD5680 is MOSFET N-CH 60V 8.5A D-PAK, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 60 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Typical Turn On Delay Time features such as 15 ns, Typical Turn Off Delay Time is designed to work in 35 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in PowerTrench Series, the device has a 9 ns of Rise Time, and Rds On Drain Source Resistance is 17 mOhms, and the Pd Power Dissipation is 60 W, and Part Aliases is FDD5680_NL, and the Packaging is Reel, and Package Case is TO-252-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 38 A, and Forward Transconductance Min is 30 S, and the Fall Time is 16 ns, and Configuration is Single, and the Channel Mode is Enhancement.

FDD5690P with circuit diagram manufactured by FSC. The FDD5690P is available in TO-252 Package, is part of the IC Chips.