FDI150N10
- Product Code: FDI150N10
- Availability: In Stock
This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
Fast switching speed
Low Gate Charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
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