DESCRIPTION

The SPN4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .

FEATURES

◆ 30V/6.8A,RDS(ON)= 28mΩ@VGS= 10V

◆ 30V/5.6A,RDS(ON)= 36mΩ@VGS= 4.5V

◆ Super high density cell design for extremely low RDS (ON)

◆ Exceptional on-resistance and maximum DC current capability

◆ SOP – 8P package design

APPLICATIONS

● Power Management in Note book

● Portable Equipment

● Battery Powered System

● DC/DC Converter

● Load Switch

● DSC

● LCD Display inverter