Product Description

Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

Product Features

• Patented High Reliability GaAs HBT Technology

• High 3rd Order Intercept : +39 dBm typ. at 1960 MHz

• Surface-Mountable Power Plastic Package

Applications

• PCS, Cellular Systems

• High Linearity IF Amplifiers