The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

Features

• NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz

• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130

• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V

• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz

• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 60

• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V

• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB

• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA

• Complete Isolation Between Transistors

• Pin Compatible with Industry Standard 3XXX Series

Arrays

Applications

• VHF/UHF Amplifiers

• VHF/UHF Mixers

• IF Converters

• Synchronous Detectors