Looking for a component that can both amplify and switch between signals within your circuit? The SIR468DP-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 5000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.