Create an effective common drain amplifier using this SI2325DS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.