Use Vishay's SI2329DS-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.