As an alternative to traditional transistors, the SI2342DS-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.