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The SI2312BDS-T1-GE3 is MOSFET N-CH 20V 3.9A SOT23-3, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI2312BDS-GE3, that offers Unit Weight features such as 0.050717 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as TO-236-3, SC-59, SOT-23-3 Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is SOT-23-3 (TO-236), and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 750mW, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 20V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 3.9A (Ta), and the Rds On Max Id Vgs is 31 mOhm @ 5A, 4.5V, and Vgs th Max Id is 850mV @ 250μA, and the Gate Charge Qg Vgs is 12nC @ 4.5V, and Pd Power Dissipation is 750 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 30 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is 3.9 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 31 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 35 ns, and the Typical Turn On Delay Time is 9 ns, and Channel Mode is Enhancement.

Si2312CDS with user guide manufactured by Vishay. The Si2312CDS is available in SOT-23 Package, is part of the FETs - Single.

SI2312CDS-T1-E3 with circuit diagram manufactured by VISHAY. The SI2312CDS-T1-E3 is available in SOT-23 Package, is part of the IC Chips.