The SI7615DN-T1-GE3 parts manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The SI7615DN-T1-GE3 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

The production status marked on Jotrin.com is for reference only. If you did not find what you were looking for, you can get more value information by email, such as the SI7615DN-T1-GE3 Inventory quantity, preferential price, and manufacturer. We are always happy to hear from you so feel free to contact us.

The SI7613DN-T1-GE3 is MOSFET P-CH 20V 35A 1212-8 PPAK, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI7613DN-GE3, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerPAKR 1212-8, as well as the Si Technology, it has an Operating Temperature range of -50°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a PowerPAKR 1212-8 of Supplier Device Package, and Configuration is Single Quad Drain Triple Source, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 52.1W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 2620pF @ 10V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 35A (Tc), and Rds On Max Id Vgs is 8.7 mOhm @ 17A, 10V, and the Vgs th Max Id is 2.2V @ 250μA, and Gate Charge Qg Vgs is 87nC @ 10V, and the Pd Power Dissipation is 3.8 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 13 ns 9 ns, and the Rise Time is 40 ns 7 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is 17 A, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 8.7 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 41 ns 42 ns, and Typical Turn On Delay Time is 43 ns 14 ns, and the Channel Mode is Enhancement.

The SI7615ADN-T1-GE3 is MOSFET P-CH 20V 35A 1212-8S, that includes 1.5V @ 250μA Vgs th Max Id, they are designed to operate with a - 20 V Vds Drain Source Breakdown Voltage, Transistor Type is shown on datasheet note for use in a 1 P-Channel, that offers Transistor Polarity features such as P-Channel, Technology is designed to work in Si, as well as the PowerPAKR 1212-8 Supplier Device Package, the device can also be used as TrenchFETR Series. In addition, the Rds On Max Id Vgs is 4.4 mOhm @ 20A, 10V, the device is offered in 4.4 mOhms Rds On Drain Source Resistance, the device has a 59 nC of Qg Gate Charge, and Power Max is 52W, and the Pd Power Dissipation is 52 W, and Part Aliases is SI7621DN-T1-GE3, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is PowerPAKR 1212-8, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, and the Input Capacitance Ciss Vds is 5590pF @ 10V, and Id Continuous Drain Current is - 35 A, and the Gate Charge Qg Vgs is 183nC @ 10V, and FET Type is MOSFET P-Channel, Metal Oxide, and the FET Feature is Standard, and Drain to Source Voltage Vdss is 20V, and the Current Continuous Drain Id 25°C is 35A (Tc), and Configuration is Single.

SI7615DN-T1 with circuit diagram manufactured by VISHAY. The SI7615DN-T1 is available in QFN8 Package, is part of the IC Chips.