SI4174DY-T1-GE3
- Product Code: SI4174DY-T1-GE3
- Availability: In Stock
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI4174DY-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.