Make an effective common source amplifier using this SI2308BDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1090 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.