This SI2306BDS-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.