SI3456DDV-T1-E3
- Product Code: SI3456DDV-T1-E3
- Availability: In Stock
If you need to either amplify or switch between signals in your design, then Vishay's SI3456DDV-T1-E3 power MOSFET is for you. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.