The IRF630PBF parts are Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB, manufactured by VISHAY SILICONIX are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values ​​of electronic parts from the world's leading manufacturers. The IRF630PBF components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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The IRF630NSTRRPBF is MOSFET N-CH 200V 9.3A D2PAK, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 82 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 15 ns, and Rise Time is 14 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 9.5 A, and the Vds Drain Source Breakdown Voltage is 200 V, and Vgs th Gate Source Threshold Voltage is 2 V to 4 V, and the Rds On Drain Source Resistance is 300 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 27 ns, and Typical Turn On Delay Time is 7.9 ns, and the Qg Gate Charge is 23.3 nC, and Forward Transconductance Min is 4.9 S, and the Channel Mode is Enhancement.

IRF630NSTRPBF with user guide manufactured by IR. The IRF630NSTRPBF is available in TO-263 Package, is part of the IC Chips.

The IRF630NSTRR is MOSFET N-CH 200V 9.3A D2PAK manufactured by IR. The IRF630NSTRR is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Package, is part of the FETs - Single, , and with support for MOSFET N-CH 200V 9.3A D2PAK, N-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK.