Make an effective common gate amplifier using this SI7615ADN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

FEATURES

• TrenchFET® power MOSFET

• Low thermal resistance PowerPAK® package with small size and low 1.07 mm profile

• 100 % Rg and UIS tested

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Load switch