GENERAL DESCRIPTION

The MT28F004B5 (x8) and MT28F400B5 (x16, x8) are nonvolatile, electrically block-erasable (Flash), programmable, read-only memories containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.

FEATURES

• Seven erase blocks:

16KB/8K-word boot block (protected)

Two 8KB/4K-word parameter blocks

Four main memory blocks

• Smart 5 technology (B5):

5V ±10% VCC

5V ±10% VPP application/production

programming1

• Advanced 0.18µm CMOS floating-gate process

• Compatible with 0.3µm Smart 5 device

• Address access time: 80ns

• 100,000 ERASE cycles

• Industry-standard pinouts

• Inputs and outputs are fully TTL-compatible

• Automated write and erase algorithm

• Two-cycle WRITE/ERASE sequence

• Byte- or word-wide READ and WRITE

(MT28F400B5, 256K x 16/512K x 8)

• Byte-wide READ and WRITE only

(MT28F004B5, 512K x 8)

• TSOP and SOP packaging options